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| 2SB1503 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification) | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1503
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A
·Complement to Type 2SD2276
APPLICATIONS
·Designed for power amplifier applications
·Optimum for 110W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-12
A
120
W
3.5
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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