 English |
|
|
|
|
|
|
|
| 2SB1495 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH POWER SWITCHING APPLICATIONS) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1495
DESCRIPTION
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
·Low-Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@IC= -1.5A
·Complement to Type 2SD2257
APPLICATIONS
·Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Pulse
-5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-0.3
A
2
W
20
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese