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| 2SB1478 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1478
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A
·Low Collector Saturation Voltage-
: VCE(sat) = -2.0V(Max.) @IC= 5A
·Complement to Type 2SD2237
APPLICATIONS
·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-8
A
60
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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