2SB1470 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1470
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2222
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
VALUE
-160
-160
-5
-8
-15
120
3.5
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃