2SB1468 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 30V/8A High-Speed Switching Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1468
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A)
·Complement to Type 2SD2219
·Complement to Type 2SD2065
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-20
A
2
W
25
150
℃
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}