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| 2SB1454 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Current Switching Applications | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1454
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@ (IC= -3A, IB=B -0.3A)
·Complement to Type 2SD2202
APPLICATIONS
·Designed for high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-90
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-9
A
2
W
25
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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