2SB1431 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1431
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -3A)
·Low Collector Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-frequency power amplifiers and low-
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-0.8
A
2
W
25
150
℃
-55~150 ℃
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