2SB1412 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1412
DESCRIPTION
·Small and slim package making it easy to make 2SB1205-used set smaller
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-5
A
1.0
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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