2SB1391 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1391
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector -emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
T_a=25℃
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-120
-120
-7
-8
-12
2
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃