2SB1367 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1367
DESCRIPTION
With TO-220F package
Complement to type 2SD2059
Low collector saturation voltage:
V_CE(sat)=-2.0V(Max) at I_C=-4A,I_B=-0.4A
Collector power dissipation:
P_C=30W(T_C=25 )
APPLICATIONS
With general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-100
-100
-5
-5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
W