2SB1366 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1366
DESCRIPTION
With TO-220F package
Complement to type 2SD2058
Low collector saturation voltage:
V_CE(SAT)=-1.0V(Max) at I_C=-2A,I_B=-0.2A
Collector power dissipation:
P_C=25W(T_C=25 )
APPLICATIONS
With general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector dissipation
T_a=25
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-60
-60
-7
-3
-0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W