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2SB1353 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1353
DESCRIPTION
·Good Linearity of hFE
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type 2SD2033
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1.5
A
1.8
W
20
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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