2SB1351 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor(Driver for Printer Head, Solenoid, Relay, Motor and General Purpose)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
2SB1351
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@IC= -10A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Driver for printer head solenoid, relay and motor and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-60
V
-60
V
-6
V
-12
A
-20
A
-1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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