2SB1347 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type(For high power amplification)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1347
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -160V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SD2029
APPLICATIONS
·Power amplifier applications
·Optimum for the output stage of a HiFi audio amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-160
V
V_CEO
Collector-Emitter Voltage
-160
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-12
A
I_CM
Collector Current-Peak
Collector Power Dissipation
@ T_C=25℃
P_C
Collector Power Dissipation
@ T_a=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-20
A
120
W
3.5
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn