2SB1316 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (−100V,−2A)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1316
DESCRIPTION
·Darlington connection for high DC current gain
·Built in resistor between base and emitter
·Built in damper diode
·Complementary NPN types:2SD2195/2SD1980
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-2.0
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-3.0
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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