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| 2SB1294 Datasheet, PDF (1/2 Pages) Rohm – Epitaxial Planar PNP Silicon Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1294
DESCRIPTION
·High Collector Current:: IC= -5A
·Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -3A
·Wide Area of Safe Operation
·Complement to Type 2SD1897
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-10
A
30
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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