2SB1290 Datasheet, PDF (1/2 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-220F Plastic Package.

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1290
DESCRIPTION
·High Collector Current:: IC= -7A
·Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -4A
·Wide Area of Safe Operation
·Complement to Type 2SD1833
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-10
A
2
W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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