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| 2SB1286 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1286
DESCRIPTION
·High DC Current Gain-
:hFE = 1000(Min)@ IC= -1A
·Collector-Emitter Breakdown Voltage-
:V(BR)CEO = -100V(Min)
·Low Collector-Emitter Saturation Voltage
:VCE(sat) = -1.5V(Max)@ IC= -1A
·Complement to Type 2SD1646
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-3
A
25
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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