2SB1284 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(-10A PNP)

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION
·High DC C urrent Gain-
: h_FE= 1500(Min.)@I_C= -5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= -100V(Min.)
·Low Collector Saturation Voltage
: V_CE(sat)= -1.5V(Max)@I_C= -5A
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current-Continuous
-0.8
A
IBM
Base Current-Peak
Total Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
-1.5
A
35
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} ^{Thermal Resistance,Junction to Case}
MAX UNIT
3.57 ℃/W
isc website：www.iscsemi.cn
1
Product Specification
2SB1284