2SB1283 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(-7A PNP)

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2SB1283
DESCRIPTION
·High DC Current Gain-
: hFE= 1500(Min.)@IC= -3A
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -3A
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
-100
V
-100
V
-7
V
-7
A
-10
A
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.5
A
-1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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