2SB1261-K Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Low Collector Saturation Voltage

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SB1261-K
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation-
: P_C= 10W(Max)@T_C=25℃
·Complement to Type 2SD1899-K
APPLICATIONS
·Designed for use in audio amplifier and switching,
especially in hybrid integrated circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-7
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-3
A
10
W
150
℃
-55~150 ℃
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