2SB1253_17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1253
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
·Complement to Type 2SD1893
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-10
A
50
W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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