2SB1236 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (-120V , -1.5A)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1236
DESCRIPTION
·High breakdown voltage. (BVCEO = -120V)
·Low collector output capacitance.
·High transition frequency. (fT = 50MHz)
·Complement to Type 2SD1857
APPLICATIONS
·Designed for audio amplifier,
voltage regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICP
Collector Current-Pulse
-3
A
PC
Collector Power Dissipation
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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