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2SB1231 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 100V/25A Switching Applications
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1231
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD1841
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for motor drivers, converters and other general
High-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-25
A
ICP
Collector Current-Pulse
-40
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-8
A
3
W
120
150
℃
-55~150
℃
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