2SB1205 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Strobe High-Current Switching Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1205
DESCRIPTION
·Large current capacity
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Strobe,voltage regulations,relay drivers,lamp drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
ICP
IB
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ Ta=25℃
Junction Temperature
Tstg
Storage Temperature Range
-25
V
-20
V
-5
V
-5
A
-8
A
-0.5
A
10
W
1.0
W
150
℃
-55~150
℃
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