2SB1184 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-60V, -3A)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1184
DESCRIPTION
·Low VCE(sat)
·Small and slim package
·Complements the 2SD1760/2SD1864
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-3
A
1.0
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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