2SB1159_16 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1159
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD1714
APPLICATIONS
·Designed for high power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-12
A
80
W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
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