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2SB1156-3PFA Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1156
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ IC= -8A
·Complement to Type 2SD1707
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-20
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
-30
A
100
W
3
150
â
Tstg
Storage Temperature Range
-55~150
â
isc websiteï¼www.iscsemi.com
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