2SB1155-3PFA Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1155
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ IC= -7A
·Complement to Type 2SD1706
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-25
A
80
W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}