2SB1113 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2SB1113
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -4A
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@IC= -4A
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ Tc=25℃
Junction Temperature
-120
V
-120
V
-5
V
-8
A
-12
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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