2SB1095 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1095
DESCRIPTION
·High Collector Current:: IC= -4A
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A
·Complement to Type 2SD1586
APPLICATIONS
·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.8
A
2
W
20
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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