2SB1089 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1089
DESCRIPTION
·High Collector Current:: IC= -3A
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
·Complement to Type 2SD1567
APPLICATIONS
·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-5
A
IB
Base Current-Continuous
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.6
A
1.3
W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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