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| 2SB1079 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1079
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·Complement to Type 2SD1559
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-20
A
ICM
Collector Current-Peak
-30
A
IBB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-3
A
100
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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