2SB1077 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1077
DESCRIPTION
·Silicon NPN triple diffused
·Low Collector-Emitter Saturation Voltage
·Complement to Type 2SD1558
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-4
ICM
Collector Current-Peak
-8
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
40
2
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.125 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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