2SB1038 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SD1310

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1038
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -60V(Min.)
·Low Collector Saturation Voltage
: V_CE(sat)= -1.5V(Max)@I_C= -2A
·Complement to Type 2SD1310
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-60
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
-60
V
-7
V
-3
A
-5
A
I_B
Base Current-Continuous
Total Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.6
A
30
W
150
℃
-55~150 ℃
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