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| 2SB1024 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – 2SB1024 | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1024
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@ IC= -3A
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -1A)
·Complement to Type 2SD1414
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-0.3
A
2
W
20
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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