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| 2SB1018A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1018A
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A
·High Current Capability- IC= -7A
·Complement to Type 2SD1411A
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1
A
2
W
30
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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