 English |
|
|
|
|
|
|
|
| 2SB1007 Datasheet, PDF (1/2 Pages) Rohm – Epitaxial Planar PNP Silicon Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1007
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Complement to Type 2SD1378
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.7
A
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
10
W
1
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese