2SA969 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA969
DESCRIPTION
·With TO-66 package
·Complement to type 2SC2239
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING(See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-160
-160
-5
-1.5
1.5
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃