2SA957 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – SILICON PNP EPITAXIAL TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA957 2SA958
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·For general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SA957
2SA958
Open emitter
V_CEO
Collector-emitter voltage
2SA957
2SA958
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_BB
Base current
P_T
Total power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-150
-200
-150
-200
-6
-2.0
-1.0
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃