2SA913 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – SI PNP EPITAXIAL PLANAR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA913 2SA913A
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1913/1913A
·Large collector power dissipation
·High V_CEO
APPLICATIONS
·Audio frequency high power driver
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SA913
2SA913A
Open emitter
V_CEO
Collector-emitter voltage
2SA913
2SA913A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-150
-180
-150
-180
-5
-1
-1.5
15
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃