2SA885 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SC1846
·Low collector-emitter saturation voltage
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA885
·
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-peak
P_C
Collector power dissipation
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
VALUE
-45
-35
-5
-1
-1.5
1.2*¹
5*²
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃