2SA843 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA843
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V_(BR)CEO= -150V(Min)
·DC Current Gain
: h_FE= 60-200@ I_C= -0.4A
·Complement to Type 2SC1683
APPLICATIONS
·Audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-200
V
V_CEO Collector-Emitter Voltage
-150
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-0.5
A
I_CM
Collector Current-Peak
P_C
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-2
A
20
W
150
℃
-55~150 ℃
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