2SA839 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA839
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1669
·High breakdown voltage
APPLICATIONS
·Audio power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE UNIT
-150
V
-150
V
-5
V
-1.5
A
1.5
A
25
W
150
℃
-55~150
℃