2SA818 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA818
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -160V(Min)
·Good Linearity of hFE
·Complement to Type 2SC1628
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-50
mA
1
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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