2SA814 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL BASE MESA TYPE

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA814 2SA815
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1624/1625
·High breakdown voltage
APPLICATIONS
·Medium power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SA814
2SA815
Open emitter
V_CEO
Collector-emitter voltage
2SA814
2SA815
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_E
Emitter current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-120
-100
-120
-100
-5
-1
1
15
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃