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2SA808 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 2SA807 2SA808 2SA808A
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA808
DESCRIPTION
·High Power Dissipation-
: PC= 50W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature
-80
V
-6
V
-6
A
-3
A
50
W
150
℃
-65~150 ℃
isc Website:www.iscsemi.cn