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2SA758 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE DIFFUSED
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA758
DESCRIPTION
·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
·Complement to Type 2SC898
APPLICATIONS
·Designed for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-110
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature
-12
A
80
W
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn