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| 2SA754 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA754
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.3V(Max.) @ IC= -1.5A
·Good Linearity of hFE
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-2
A
PC
Total Power Dissipation@ TC=25â
20
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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