 English |
|
|
|
|
|
|
|
| 2SA746 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – 2SA746 | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA746
DESCRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@TC=25â
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type 2SC1115
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature
-4
A
100
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese